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BGA2715 Datasheet PDF : 15 Pages
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NXP Semiconductors
BGA2715
MMIC wideband amplifier
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Ptot = 200 mW;
Tsp 90 C
Typ
Unit
300
K/W
7. Characteristics
Table 7. Characteristics
VS = 5 V; IS = 4.3 mA; Tj = 25 C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
IS
s212
supply current
insertion power gain
f = 100 MHz
f = 1 GHz
3.5 4.3
11 13.3
20 21.7
5.5 mA
15 dB
23 dB
f = 1.8 GHz
21 23.2 25 dB
f = 2.2 GHz
21 23.3 25 dB
f = 2.6 GHz
20 22.1 24 dB
f = 3 GHz
18 20.1 22 dB
s112 input return losses
f = 1 GHz
f = 2.2 GHz
10 12
8 10
- dB
- dB
s222
output return losses
f = 1 GHz
f = 2.2 GHz
10 12
- dB
7 8.5 - dB
s122 isolation
f = 1.6 GHz
f = 2.2 GHz
53 54
38 39
- dB
- dB
NF
noise figure
f = 1 GHz
- 2.6 2.8 dB
f = 2.2 GHz
- 3.1 3.3 dB
B
bandwidth
at s212 3 dB below flat gain
at 1 GHz
3 3.3 - GHz
K
stability factor
f = 1 GHz
- 18
-
f = 2.2 GHz
- 2.3 -
PL(sat)
saturated load power f = 1 GHz
f = 2.2 GHz
5 4.0 -
6 5.0 -
dBm
dBm
PL(1dB) load power
at 1 dB gain compression;
f = 1 GHz
9 8.0 - dBm
at 1 dB gain compression;
f = 2.2 GHz
10 8.5 - dBm
IM2
second order
intermodulation
product
at PD = 40 dBm, f0 = 1 GHz
29 30
- dBc
IP3in
input, third order
intercept point
f = 1 GHz
f = 2.2 GHz
21 19.4 -
24 22.7 -
dBm
dBm
IP3out
output, third order
intercept point
f = 1 GHz
f = 2.2 GHz
0 2.3 - dBm
1 0.6 - dBm
BGA2715
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 September 2011
© NXP B.V. 2011. All rights reserved.
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