BGA2716 Ver la hoja de datos (PDF) - Philips Electronics
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BGA2716 Datasheet PDF : 14 Pages
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Philips Semiconductors
BGA2716
MMIC wideband amplifier
6. Thermal characteristics
Table 6:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Ptot = 200 mW;
Tsp ≤ 90 °C
Typ
Unit
300
K/W
7. Characteristics
9397 750 13292
Product data sheet
Table 7: Characteristics
VS = 5 V; IS = 15.9 mA; Tj = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
IS
s212
supply current
insertion power f = 100 MHz
gain
f = 1 GHz
13
15.9 21
mA
21
22.1 23
dB
22
22.9 24
dB
f = 1.8 GHz
22
23.1 25
dB
f = 2.2 GHz
21
22.8 24
dB
f = 2.6 GHz
20
22.1 24
dB
f = 3 GHz
19
20.8 22
dB
s112
input return
losses
f = 1 GHz
f = 2.2 GHz
15
17
-
dB
10
12
-
dB
s222
output return
losses
f = 1 GHz
f = 2.2 GHz
10
12
-
dB
9
11
-
dB
s122 isolation
f = 1.6 GHz
f = 2.2 GHz
30
31
-
dB
33
35
-
dB
NF
noise figure
f = 1 GHz
-
5.3
5.4
dB
f = 2.2 GHz
-
5.5
5.6
dB
B
bandwidth
at s212 −3 dB below flat
3
3.2
-
GHz
gain at 1 GHz
K
stability factor f = 1 GHz
-
1.4
-
f = 2.2 GHz
-
1.9
-
PL(sat)
saturated load f = 1 GHz
power
f = 2.2 GHz
10
11.6 -
6
7.5
-
dBm
dBm
PL(1dB) load power
at 1 dB gain compression; 8
f = 1 GHz
8.9
-
dBm
at 1 dB gain compression; 5
f = 2.2 GHz
6.1
-
dBm
IM2
second order at PL = −5 dBm;
intermodulation f0 = 1 GHz
product
36
38
-
dBc
IP3in
input, third
f = 1 GHz
order intercept f = 2.2 GHz
point
−2
−0.7 -
−8
−6.9 -
dBm
dBm
IP3out
output, third f = 1 GHz
order intercept f = 2.2 GHz
point
21
22.2 -
15
15.9 -
dBm
dBm
Rev. 02 — 24 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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