NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
50
gain
(dB)
40
GUM
MSG
30
mra708
50
gain
(dB)
40
30
GUM
MSG
mra709
20
20
10
Gmax
10
Gmax
0
10
102
103 f (MHz) 104
VCE = 6 V; IC = 5 mA.
Fig 7. Gain as a function of frequency; IC = 5 mA.
5
Fmin
(dB)
4
3
2 2000
1000 Fmin
900
500
1
f (MHz)
900
1000
Gass
2000
mra714
20
Gass
(dB)
15
10
5
0
0
−5
1
10
102
IC (mA)
Fig 9.
VCE = 6 V.
Minimum noise figure and associated
available gain as functions of collector
current.
0
10
102
103 f (MHz) 104
VCE = 6 V; IC = 20 mA.
Fig 8. Gain as a function of frequency; IC = 20 mA.
5
Fmin
(dB)
4
IC (mA)
5
20
Gass
mra715
20
Gass
(dB)
15
3
10
2
20
1
Fmin
5
0
102
5
0
−5
103
f (MHz)
104
VCE = 6 V.
Fig 10. Minimum noise figure and associated
available gain as functions of frequency.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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