BFS17N Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

BFS17N

NPN RF TRANSISTOR IN SOT23

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

BFS17N

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Symbol

VCBO

VCEO

VEBO

IC

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Power Dissipation

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Leads

Operating and Storage Temperature Range

(Note 6)

(Note 7)

(Note 6)

(Note 7)

(Note 8)

Symbol

PD

RθJA

RθJL

TJ,TSTG

Value

20

11

3

50

Value

310

350

403

357

350

-55 to +150

Unit

V

V

V

mA

Unit

mW

°C/W

°C/W

°C

ESD Ratings (Note 9)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

2,000

100

Unit JEDEC Class

V

2

V

A

Notes:

6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;

7. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB

8. Thermal resistance from junction to solder-point (at the end of the leads).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

BFS17N

Document Number DS32160 Rev. 3 - 2

2 of 7

www.diodes.com

October 2012

© Diodes Incorporated

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