BFR182(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFR182
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR182

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 3 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

fT

6

8

- GHz

Ccb

- 0.33 0.5 pF

Cce

-

0.2

-

Ceb

-

0.6

-

F

dB

-

1.2

-

-

1.9

-

Power gain, maximum available 1)

IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gma

f = 1.8 GHz

- 17.5 -

- 11.5 -

Transducer gain

IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

- 14.5 -

-

9

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Aug-09-2001

Share Link: