Q62702-F1315 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

Q62702-F1315

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 1mA to 20mA

• fT = 8GHz

F = 1.2dB at 900MHz

BFR 182

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFR 182 RGs

Q62702-F1315

1=B

2=E

3=C

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 93 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

12

20

20

2

35

4

250

150

- 65 ... + 150

- 65 ... + 150

≤ 230

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Sep-04-1996

Share Link: