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BFP520F

Low profile high gain silicon NPN RF bipolar transistor

Infineon Technologies 

BFP520F

Low profile high gain silicon NPN RF bipolar transistor

Electrical characteristics

3.3

Frequency dependent AC characteristics

Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.

VC

Top View

E

C

Bias-T

OUT

VB

Bias-T

IN

B

E

(Pin 1)

Figure 2

Testing circuit

Table 6

AC characteristics, VCE = 2 V, f = 1.8 GHz

Parameter

Symbol

Values

Unit

Min. Typ. Max.

Power gain

• Maximum power gain

• Transducer gain

–

–

dB

Gms

22.5

|S21|2

20.5

Noise figure

• Minimum noise figure

NFmin

0.95

Linearity

• 3rd order intercept point at output

OIP3

• 1 dB gain compression point at output OP1dB

dBm

23.5

10.5

Note or test condition

IC = 20 mA

IC = 2 mA

ZS = ZS,opt, ZL = ZL,opt,

IC = 20 mA

Note:

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measurement is 50 Ω from 0.1 MHz to 6 GHz.

Datasheet

6

Revision 2.0

2019-01-25

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