BFP520F Ver la hoja de datos (PDF) - Infineon Technologies
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BFP520F Datasheet PDF : 9 Pages
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BFP520F
Low profile high gain silicon NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
Parameter
DC characteristics at TA = 25 °C
Symbol
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
V(BR)CEO
ICES
ICBO
IEBO
hFE
Values
Unit
Min. Typ. Max.
2.5 3
3.5 V
–
–
10 2) μA
200 2) nA
35 2) μA
70 110 170
Note or test condition
IC = 1 mA, IB = 0,
open base
VCE = 10 V, VBE = 0,
E-B short circuited
VCB = 5 V, IE = 0,
open emitter
VEB = 1 V, IC = 0,
open collector
VCE = 2 V, IC = 20 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit
Min. Typ. Max.
Transition frequency
fT
32 45 –
GHz
Collector base capacitance
CCB
–
0.07 0.14 pF
Collector emitter capacitance
CCE
0.25 –
Emitter base capacitance
CEB
0.31
Note or test condition
VCE = 2 V, IC = 30 mA,
f = 2 GHz
VCB = 2 V, VBE = 0,
f = 1 MHz,
emitter grounded
VCE = 2 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
2 Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
Revision 2.0
2019-01-25
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