BFP520F(2001) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BFP520F Datasheet PDF : 3 Pages
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SIEGET45 BFP520F
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 20 mA, VCE = 2 V
V(BR)CEO 2.5
ICBO
-
IEBO
-
hFE
70
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Collector-emitter capacitance
VCE = 2 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
fT
-
Ccb
-
Cce
-
Ceb
-
F
-
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable 1)
Gms
-
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Insertion power gain
|S21|2
-
IC = 20 mA, VCE = 2 V, f = 1.8 GHz,
ZS = ZL = 50
Third order intercept point at output2)
VCE = 2 V, f = 1.8 GHz, ZS=ZL=50 ,
IP3
-
IC = 20 mA
1dB compression point3)
VCE = 2 V, f = 1.8 GHz, ZS=ZL=50 ,
P-1dB
-
IC = 20 mA
3
-
-
110
45
0.07
0.25
0.31
0.95
23
20.5
23.5
10.5
3.5 V
200 nA
35 µA
200 -
- GHz
- pF
-
-
- dB
-
- dB
- dBm
-
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 from 0.1MHz to 6GHz.
3DC current at no input power
2
Dec-07-2001
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