BFP460 Ver la hoja de datos (PDF) - Infineon Technologies

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BFP460

Surface mount wideband silicon NPN RF bipolar transistor

Infineon Technologies 

BFP460

Surface mount wideband silicon NPN RF bipolar transistor

Electrical characteristics

Table 7

AC characteristics, VCE = 3 V, f = 1.8 GHz

Parameter

Symbol

Values

Unit

Min. Typ. Max.

Power gain

• Maximum power gain

• Transducer gain

Gms

|S21|2

–

– dB

17.5

15

Noise figure

• Minimum noise figure

NFmin

1.1

Linearity

• 3rd order intercept point at output

• 1 dB compression point at output

OIP3

OP1dB

dBm

27.5

11.5

13

Note or test condition

IC = 20 mA

IC = 5 mA

ZS = ZL = 50 Ω,

IC = 20 mA,

IC = 20 mA,

IC = 35 mA

Table 8

AC characteristics, VCE = 3 V, f = 3 GHz

Parameter

Symbol

Values

Unit

Min. Typ. Max.

Power gain

• Maximum power gain

• Transducer gain

Gma

|S21|2

–

– dB

12.5

10.5

Noise figure

• Minimum noise figure

NFmin

1.2

Note or test condition

IC = 20 mA

IC = 5 mA

Note:

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measurement is 50 Ω from 0.1 MHz to 6 GHz.

Datasheet

7

Revision 2.0

2019-01-25

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