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Fabricante

BFP420F

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

5

Electrical Characteristics

BFP420F

Electrical Characteristics

5.1

DC Characteristics

Table 5-1 DC Characteristics at TA = 25 °C

Parameter

Symbol

Collector emitter breakdown voltage V(BR)CEO

Min.

4.5

Collector emitter leakage current

ICES

–

–

Collector base leakage current

Emitter base leakage current

DC current gain

ICBO

–

IEBO

–

hFE

60

Values

Typ. Max.

5.5 –

–

10

1

30

1

30

10

100

95

130

Unit Note / Test Condition

V

IC = 1 mA, IB = 0

Open base

μA VCE = 15 V, VBE = 0

nA

VCE = 3 V, VBE = 0

E-B short circuited

nA VCB = 3 V, IE = 0

Open emitter

nA VEB = 0.5 V, IC = 0

Open collector

VCE = 4 V, IC = 5 mA

Pulse measured

5.2

General AC Characteristics

Table 5-2 General AC Characteristics at TA = 25 °C

Parameter

Symbol

Min.

Transition frequency

fT

18

Collector base capacitance

CCB

–

Collector emitter capacitance

CCE

–

Emitter base capacitance

CEB

–

Values

Typ. Max.

25

–

0.15 0.3

0.46 –

0.55 –

Unit Note / Test Condition

GHz

pF

pF

pF

VCE = 3 V, IC = 30 mA

f = 2 GHz

VCB = 2 V, VBE = 0

f = 1 MHz

Emitter grounded

VCE = 2 V, VBE = 0

f = 1 MHz

Base grounded

VEB = 0.5 V, VCB = 0

f = 1 MHz

Collector grounded

Data Sheet

11

Revision 1.1, 2012-11-07

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