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BFQ18A

NPN 4 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 4 GHz wideband transistor

Product specification

BFQ18A

DESCRIPTION

NPN transistor in a plastic SOT89

envelope intended for application in

thick and thin-film circuits. It is

primarily intended for MATV

purposes.

PINNING

PIN

DESCRIPTION

Code: FF

1 emitter

2 collector

3 base

page

1

2

3

Bottom view

MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

IC

Ptot

fT

collector-base voltage

collector-emitter voltage

DC collector current

total power dissipation

transition frequency

Cre

feedback capacitance

dim

intermodulation distortion

CONDITIONS

TYP. MAX. UNIT

open emitter

open base

− 25 V

− 18 V

− 150 mA

up to Ts = 155 °C (note 1)

−1

IC = 100 mA; VCE = 10 V; f = 500 MHz; 4 −

Tj = 25 °C

IC = 0; VCE = 10 V; f = 10.7 MHz

1.2 −

IC = 80 mA; VCE = 10 V; RL = 75 Ω;

−

−60

Vo = 700 mV; measured at

f(p+q-r) = 793.25 MHz

W

GHz

pF

dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

DC collector current

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

open base

open collector

up to Ts = 155 °C (note 1)

Note

1. Ts is the temperature at the soldering point of the collector tab.

MIN. MAX. UNIT

−

25

V

−

18

V

−

2

V

−

150 mA

−

1

W

−65 150 °C

−

175 °C

September 1995

2

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