BFQ166 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BFQ166

NPN video transistor

Philips Electronics 

Philips Semiconductors

NPN video transistor

Product specification

BFQ166

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to soldering point

CONDITIONS

Ts = 105 °C; Ptot = 2 W;

notes 1 and 2

VALUE

35

Notes

1. Ts is the temperature at the soldering point of the collector lead.

2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)CBO

V(BR)CER

V(BR)CEO

ICES

hFE

Cc

Ccb

collector-base breakdown voltage

collector-emitter breakdown voltage

collector-emitter breakdown voltage

collector-emitter cut-off current

DC current gain

collector capacitance

collector-base capacitance

fT

transition frequency

CONDITIONS

MIN. TYP. MAX. UNIT

IC = 5 mA; IE = 0

20

IC = 10 mA; RBE = 100 Ω

19

IC = 10 mA; IB = 0

10

VCE = 10 V; VBE = 0

−

IC = 300 mA; VCE = 5 V; see Fig.4 50

IE = ie = 0; VCB = 5 V; f = 1 MHz −

IC = ic = 0; VCB = 5 V; f = 1 MHz; −

see Fig.6

−

−

V

−

−

V

−

−

V

−

100 µA

60 −

4.5 −

pF

3.2 −

pF

IC = 300 mA; VCE = 5 V;

f = 100 MHz; Tamb = 25 °C;

see Fig.5

1

−

−

GHz

1997 Oct 02

3

Share Link: