BFG325XR Ver la hoja de datos (PDF) - Philips Electronics
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BFG325XR Datasheet PDF : 12 Pages
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Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
250
Ptot
(mW)
200
150
100
50
0
0
50
100
Fig 1. Power derating curve
001aac147
150
200
Tsp (°C)
0.34
CCBS
(pF)
0.30
001aac149
0.26
35
IC
(mA)
30
25
20
15
10
5
001aac148
IB = 350 µA
300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
0
0
1
2
3
4
5
6
VCE (V)
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
40
G
(dB)
30
MSG
s21 2
001aac150
20
Gmax
10
0.22
0
1
2
3
4
5
VCB (V)
IC = 0 mA; f = 1 MHz.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
0
10
102
103
104
f (MHz)
IC = 15 mA; VCE = 3 V.
Fig 4. Gain as a function of frequency; typical values
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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