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BFG25A

NPN 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFG25A/X

FEATURES

• Low current consumption

(100 µA to 1 mA)

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• RF low power amplifiers, such as

pocket telephones, paging

systems, with signal frequencies

up to 2 GHz.

DESCRIPTION

NPN silicon wideband transistor in a

four-lead dual emitter SOT143B

plastic package (cross emitter).

PINNING

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

handbook, 2 c4olumns

3

1

Top view

2

MSB014

Marking code: V11.

Fig.1 SOT143B.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

IC

Ptot

hFE

fT

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

transition frequency

GUM

maximum unilateral power gain

F

noise figure

CONDITIONS

Ts ≤ 165 °C

IC = 0.5 mA; VCE = 1 V

IC = 1 mA; VCE = 1 V;

f = 500 MHz; Tamb = 25 °C

IC = 0.5 mA; VCE = 1 V;

f = 1 GHz; Tamb = 25 °C

IC = 0.5 mA; VCE = 1 V;

f = 1 GHz; Γ = Γopt; Tamb = 25 °C

IC = 1 mA; VCE = 1 V; f = 1 GHz;

Γ = Γopt; Tamb = 25 °C

MIN.

−

−

−

−

50

3.5

−

−

−

TYP.

−

−

−

−

80

5

18

1.8

2

MAX.

8

5

6.5

32

200

−

UNIT

V

V

mA

mW

GHz

−

dB

−

dB

−

dB

1997 Oct 29

2

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