BF909 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BF909

N-channel dual gate MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual gate MOS-FETs

Product specification

BF909; BF909R

10 2

y fs

(mS)

10

MLB948

10 2

handbook1,0halfpage

y fs

yos

ϕfs

(mS)

(deg)

1

ϕfs

10

10 1

MLB949

bos

gos

1

10

102

f (MHz)

1

10 3

VDS = 5 V; VG2 = 4 V.

ID = 15 mA; Tamb = 25 °C.

Fig.16 Forward transfer admittance and phase as

a function of frequency; typical values.

10 2

10

102

f (MHz)

10 3

VDS = 5 V; VG2 = 4 V.

ID = 15 mA; Tamb = 25 °C.

Fig.17 Output admittance as a function of

frequency; typical values.

VAGC

R1

10 k Ω

C1

4.7 nF

C3 12 pF

RGEN

50 Ω

VI

C2

R2

50 Ω

4.7 nF

R G1

VGG

DUT

R3

10 Ω

C5

2.2

pF

L1

≈ 350 nH

C4

4.7 nF

VDS

RL

50 Ω

MLD151

1995 Apr 25

Fig.18 Cross-modulation test set-up.

8

Share Link: