Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BF547W
30
handbook, halfpage
gain
(dB)
20
MLB590
10
0
0
5
10
15
20
IC (mA)
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10
102
MLB591
103
104
f (MHz)
VCE = 10 V; f = 100 MHz.
Fig.6 Gain as a function of collector current;
typical values.
1
handbook, halfpage
VCE(sat)
(V)
0.8
MLB592
0.6
0.4
0.2
0
0
2
4
6
8
10
IC (mA)
VCE = 10 V; IC = 15 mA.
Fig.7 Gain as a function of frequency;
typical values.
6
handbook, halfpage
F
(dB)
4
MLB593
2
0
10
1
1
10
IC (mA)
IC/IB = 10.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
VCE = 10 V; ZS = ZL = 50 Ω; f = 100 MHz.
Fig.9 Minimum noise figure as a function of
collector current; typical values.
June 1994
5