BF547 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BF547 Datasheet PDF : 11 Pages
| |||
Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BF547
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
from junction to soldering point note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cre
feedback capacitance
GUM
maximum unilateral power
gain; note 1
CONDITIONS
MIN.
IE = 0; VCB = 10 V
−
IC = 2 mA; VCE = 10 V
40
IC = 15 mA; VCE = 10 V; f = 500 MHz 0.8
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = 1 mA; VCE = 10 V; f = 100 MHz −
TYP.
−
95
1.2
1
20
MAX. UNIT
100 nA
250
1.6 GHz
−
pF
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10 log
--------------------------S----2---1----2------------------------- dB .
1
–
S11
2
1
–
S22
2
400
handbook, halfpage
Ptot
(mW)
300
MBB401
200
100
0
0
50
100
150
200
Ts (oC)
Fig.2 Power derating curve.
handbook1,4h0alfpage
h FE
100
MBB397
60
20
10 1
1
10 I C (mA) 10 2
VCE = 10 V.
Fig.3 DC current gain as a function of collector
current.
September 1995
3
Share Link: 