BF1212 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
BF1212 Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
102
handbook, halfpage
yis
(mS)
10
1
MLE245
bis
gis
103
handbook, halfpage
yrs
(μS)
102
10
MLE246 −103
ϕrs
(deg)
ϕrs
−102
yrs
−10
10−1
10
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.17 Input admittance as a function of frequency;
typical values.
1
−1
10
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.18 Reverse transfer admittance and phase as
functions of frequency; typical values.
handbook1, 0h2alfpage
yfs
(mS)
10
MLE247 −102
handbook, 1h0alfpage
yfs
ϕfs
yos
(deg)
(mS)
−10
1
ϕfs
MLE248
bos
1
−1
10
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.19 Forward transfer admittance and phase as
functions of frequency; typical values.
10−1
10
gos
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 C.
Fig.20 Output admittance as a function of
frequency; typical values.
2003 Nov 14
9
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