BF1212 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BF1212 Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R;
BF1212WR
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1212, BF1212R and BF1212WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1212; marking code: LGp
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
handbook, halfpage
3
4
2
1
Top view
MSB035
BF1212R; marking code: LKp
Fig.2 Simplified outline (SOT143R).
2
Top view
1
MSB842
BF1212WR; marking code: ML
Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
cross-modulation
Tj
junction temperature
2003 Nov 14
CONDITIONS
f = 1 MHz
f = 800 MHz
input level for k = 1 % at
40 dB AGC
2
MIN.
28
100
TYP.
33
1.7
15
1.1
104
MAX.
6
30
180
43
2.2
30
1.8
UNIT
V
mA
mW
mS
pF
fF
dB
dBV
150
C
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