Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
BF1009S(1999) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BF1009S
(Rev.:1999)
Silicon N-Channel MOSFET Tetrode
Infineon Technologies
BF1009S Datasheet PDF : 4 Pages
1
2
3
4
BF 1009S
Total power dissipation
P
tot
=
f
(
T
S
)
Drain current
I
D
=
f
(
V
G2S
)
300
mW
200
150
100
50
00
20 40 60 80 100 120
°C
150
T
S
Insertion power gain
|
S
21
|
2
=
f
(
V
G2S
)
15
mA
12
11
10
9
8
7
6
5
4
3
2
1
00.0
1.0 2.0
3.0
4.0
V
6.0
V
G2S
Forward transfer admittance
|
Y
21
| =
f
(
V
G2S
)
10
dB
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-600.0
1.0
2.0
3.0
4.0
V
6.0
V
G2S
28
mS
24
22
20
18
16
14
12
10
8
6
4
2
00.0
1.0 2.0
3.0
4.0
V
6.0
V
G2S
3
May-05-1999
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]