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Fabricante

BF1005

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled

input stages up to 1 GHz

• Operating voltage 5V

• Integrated biasing network

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BF1005...

AGC

RF

Input

Drain RF Output

G2

+ DC

G1

GND

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

Pin Configuration

BF1005

SOT143 1=S 2=D 3=G2 4=G1 -

-

BF1005R

SOT143R 1=D 2=S 3=G1 4=G2 -

-

Marking

MZs

MZs

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

TS ≤ 76 °C

Storage temperature

Channel temperature

VDS

ID

±IG1/2SM

+VG1SE

Ptot

8

V

25

mA

10

3

V

200

mW

Tstg

-55 ... 150

°C

Tch

150

1Pb-containing package may be available upon special request

Note:

It is not recommended to apply external DC-voltage on Gate 1 in active mode.

1

2007-04-20

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