BDV67B Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BDV67B

Silicon NPN Power Transistors

Inchange Semiconductor 

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BDV67/67A/67B/67C/67D

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDV67

V(BR)CEO

Collector-emitter

breakdown voltage

BDV67A

BDV67B IC=30mA, IB=0

BDV67C

BDV67D

VCEsat

VBE

ICBO

ICEO

IEBO

hFE-1

hFE-2

hFE-3

CC

VF

ton

toff

Collector-emitter saturation voltage IC=10A ,IB=40mA

Base-emitter on voltage

Collector cut-off current

Collector cut-off current

IC=10A ; VCE=3V

VCB=VCBOmax, IE=0

VCB=1/2VCBOmax; Tj=150

VCE=1/2VCEOmax, IB=0

Emitter cut-off current

VEB=5V; IC=0

DC current gain

IC=1A ; VCE=3V

DC current gain

IC=10A ; VCE=3V

DC current gain

IC=16A ; VCE=3V

Collector capacitance

IE=0 ; VCB=10V;f=1MHz

Diode forward voltage

IE=10A

Turn-on time

Turn-off time

IC = 10 A, IB1 =-IB2=40 mA

VCC = 12V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-mb Thermal resistance junction to mounting base

MIN TYP. MAX UNIT

60

80

100

V

120

150

2.0

V

2.5

V

1.0

4.0

mA

1

mA

5

mA

3000

1000

1000

300

pF

3.0

V

1.0

µs

3.5

µs

MAX

0.625

UNIT

K/W

2

Share Link: