BDV67A(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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BDV67A
(Rev.:2012)

NPN SILICON DARLINGTONS POWER TRANSISTORS

Comset Semiconductors 

BDV67-A-B-C-D

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

PT

Power Dissipation

@ Tmb = 25° C

TJ

Junction Temperature

TS

Storage Temperature

BDV67

BDV67A

BDV67B

BDV67C

BDV67D

BDV67

BDV67A

BDV67B

BDV67C

BDV67D

BDV67

BDV67A

BDV67B

BDV67C

BDV67D

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-mb

Thermal Resistance, Junction to Mounting Base

Value

200

Unit

W

150

°C

-65 to +150

Value

0.625

Unit

°C / W

SWITCHING TIMES

Symbol

Ratings

ton

turn-on time

toff

turn-off time

Test Condition(s)

IC= 10 A , VCC= 12 V

IB1 = -IB2 = 40 mA

Min Typ Max Unit

-

1

-

- 3.5 -

µs

26/09/2012

COMSET SEMICONDUCTORS

2/5

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