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BD8963EFJ(2010) Ver la hoja de datos (PDF) - ROHM Semiconductor

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BD8963EFJ Datasheet PDF : 18 Pages
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BD8963EFJ
Technical Note
Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4
3.76W
3
IC only
θj-a=249.5/W
1 layerscopper foil area:0mm×0mm
θj-a=153.2/W
2 layerscopper foil area:15mm×15mm
θj-a=113.6/W
2 layerscopper foil area:70mm×70mm
θj-a=59.2/W
4 layerscopper foil area:70mm×70mm
θj-a=33.3/W
(when mounted on a board 70mm×70mm×1.6mm
Glass-epoxy PCB with termal Via)
P=IOUT2×RON
RON=D×RONP+(1-D)RONN
DON duty (=VOUT/VCC)
RCOILDC resistance of coil
RONPON resistance of P-channel MOS FET
RONNON resistance of N-channel MOS FET
IOUTOutput current
2.11W
2
1.10W
1
0.82W
0.50W
0
0
25
50
75 85 100
125
150
Ambient temperature:Ta [℃]
Fig.24 Thermal derating curve
(HTSOP-J8)
Ex.)VCC=5V, VOUT=1.1V, RONP=0.145Ω, RONN=0.08Ω
IOUT=3A, for example,
D=VOUT/VCC=1.1/5=0.22
RON=0.22×0.145+(1-0.22)×0.08
=0.0319+0.0624
=0.0943[Ω]
P=32×0.0943=0.8487[W]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater.
With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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9/17
2010.06 - Rev.A

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