BD8160AEFV-E2 Ver la hoja de datos (PDF) - ROHM Semiconductor
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BD8160AEFV-E2 Datasheet PDF : 19 Pages
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BD8160AEFV
Technical Note
●Electrical characteristics (unless otherwise specified VIN=12V and Ta=25°C)
3. General
Parameter
Symbol
Limits
Min
Typ
Max
Supply current
Average supply current
ICC
-
5
8
Oscillator
Oscillation frequency1
FOSC1
600
750
900
Oscillation frequency2
Protections
FOSC2
400
500
600
Under voltage lockout threthold1
Under voltage lockout threthold2
VUVLO1
6.9
7.4
7.9
VUVLO2
6.5
7.0
7.5
Thermal Shutdown
Short Circuit Protection Time 1
TTSD
TSCP1
-
175
-
153
219
285
Short Circuit Protection Time 2
FB threshold1 for SCP
TSCP2
VFBSCP1
230
0.985
328
1.065
426
1.145
FB threshold2 for SCP
FBB threshold1 for SCP
VFBSCP2
-
0.969
-
VFBBSCP1
-
1.055
-
FBB threshold2 for SCP
FBP threshold1 for SCP
VFBBSCP2
-
0.874
-
VFBPSCP1
-
0.967
-
FBP threshold2 for SCP
FBN threshold1 for SCP
VFBPSCP2
-
0.859
-
VFBNSCP1
-
0.406
-
FBN threshold2 for SCP
Reference Voltage
VFBNSCP2
-
0.505
-
Reference Voltage
Gate Drive
VREF
1.188 1.213 1.238
Gate drive threshold
GD output low voltage
VGD
0.985 1.065 1.145
VOL
-
0.7
1.4
GD output leakage current
Logic signals EN1, EN2, FREQ
ILK
-
0
10
High level input voltage
VIH
2.0
-
-
Low level input voltage
VIL
-
* This product is not designed for protection against radioactive rays.
-
0.8
Unit
Conditions
mA
kHz FREQ = High
kHz FREQ = low
V VIN rising
V VIN falling
℃
*1
ms FREQ = High
ms FREQ = Low
V FB rising
V FB falling
V FBB rising
V FBB falling
V FBP rising
V FBP falling
V FBN falling
V FBN rising
V
V
V I=1mA
µA
V
V
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© 2009 ROHM Co., Ltd. All rights reserved.
3/18
2009.07 - Rev.B
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