BD82000FVJ-E2 Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

BD82000FVJ-E2

1ch High Side Switch ICs for USB Devices and Memory Cards

ROHM Semiconductor 

BD82000FVJ, BD82001FVJ

●Electrical Characteristics

○BD82000FVJ (Unless otherwise specified VIN = 5.0V, Ta = 25℃)

Parameter

Symbol

Min.

Limits

Typ.

Max.

Operating current

IDD

-

110

160

Standby current

/EN input voltage

/EN input current

ISTB

-

0.01

1

V/EN

2.0

-

-

V/EN

-

-

0.8

I/EN

-1.0

0.01

1.0

/OC output low voltage

V/OCL

-

-

0.5

/OC output leak current

IL/OC

-

0.01

1

/OC delay time

T/OC

10

15

20

On-resistance

RON

-

70

110

Switch leak current

ILSW

-

-

1.0

Current limit threshold

Short circuit current

ITH

1.0

1.5

2.0

ISC

0.7

1.0

1.4

Output rise time

TON1

-

0.8

10

Output turn-on time

TON2

-

1.1

20

Output fall time

TOFF1

-

5

20

Output turn-off time

UVLO threshold

T OFF2

-

10

40

VTUVH

2.1

2.3

2.5

VTUVL

2.0

2.2

2.4

Technical Note

Unit

Condition

μA V/EN = 0V , OUT=OPEN

μA V/EN = 5V , OUT=OPEN

V High input

V Low input

μA V/EN = 0V or V/EN = 5V

V I/OC = 0.5mA

μA V/OC = 5V

ms

mΩ IOUT = 500mA

μA V/EN = 5V, VOUT = 0V

A

A

VOUT = 0V

CL = 47μF (RMS)

ms RL = 10Ω

ms RL = 10Ω

μs RL = 10Ω

μs RL = 10Ω

V Increasing VIN

V Decreasing VIN

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3/16

2011.05 - Rev.B

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