BD8312HFN(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BD8312HFN
(Rev.:2009)

Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET

ROHM Semiconductor 

BD8312HFN

Electrical Characteristics

（Unless otherwise specified, Ta = 25 ℃, VCC = 7.4 V）

Parameter

Symbol

[Low voltage input malfunction preventing circuit]

Detection threshold voltage

VUV

Hysteresis range

ΔVUVhy

[Oscillator]

Oscillation frequency

Fosc

[Regulator]

Output voltage

VREG

[Error AMP]

INV threshold voltage

VINV

Input bias current

IINV

Soft-start time

Tss

[PWM comparator]

LX Max Duty

Dmax

[Output]

PMOS ON resistance

RONP

NMOS ON resistance

RONN

Leak current

Ileak

[STB]

STB pin

control voltage

Operation

No-operation

VSTBH

VSTBL

STB pin pull-down resistance

[Circuit current]

VCC pin

Standby current

PVCC pin

ISTB1

ISTB2

Circuit current at operation VCC

Circuit current at operation PVCC

 Not designed to be resistant to radiation

Target Value

Min

Typ

Max

-

2.9

3.2

100

200

300

1.38

1.5

1.62

4.65

5.0

5.35

0.99

1.00

1.01

-50

0

50

3.2

5.3

7.4

-

-

100

-

450

600

-

300

420

-1

0

1

2.5

-

11

-0.3

-

0.3

250

400

700

-

-

1

-

-

1

-

600

900

-

30

50

Technical Note

Unit

Conditions

V

VREG monitor

mV

MHz

V

V

nA

msec

VCC=12.0V , VINV=6.0V

%

mΩ

mΩ

uA

V

V

kΩ

uA

uA

uA

VINV=1.2V

uA

VINV=1.2V

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© 2009 ROHM Co., Ltd. All rights reserved.

2/14

2009.04- Rev.B

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