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BD8201FM Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
BD8201FM
ROHM
ROHM Semiconductor ROHM
BD8201FM Datasheet PDF : 5 Pages
1 2 3 4 5
2/4
● ELECTRIC CHARACTERISTICS
(Unless otherwise noted Ta=25℃, PREVCC=LDVCC=VCC1=7.5V,VCC23=5V,BIAS=1.65V, RL=8Ω)
Parameter
Symbol MIN. TYP. MAX. Unit
Circuit Current (at no signal) (LDVcc)
ICCLD − −
1.5
mA
Circuit Current (at no signal) (Vcc1)
ICC1 − −
1.0
mA
Circuit Current (at no signal) (Vcc23)
ICC23 − −
1.0
mA
Circuit Current (at no signal) (PreVcc)
ICCPRE − −
25
mA
<BTL Driver CH1〜CH3>
Output Offset Voltage
VOFS -50
0
+50
mV
Maximum Output Amplitude (CH1)
VOM1 4.7 5.4
Maximum Output Amplitude (CH2,3)
VOM23 3.7 4.0
Closed circuit voltage gain (CH1)
GVC1 9
12
15
dB
Closed circuit voltage gain (CH2,3)
GVC2 16
18
20
dB
Positive and negative voltage gain (CH1〜CH3) ΔGVC -2.0 0
2.0
dB
Mute ON Voltage
VMON GND −
0.5
Mute・Release voltage
VMOFF 2.0 − PREVCC V
Mute terminal inflow current
IMUTE −
50
100 μA
Bias Terminal Input Current
IBIAS −
50
100 μA
<Loading driver block CH4>
Output Offset Voltage
VOFSL -35
0
+35
mV
Input terminalthreshold voltage
VIH 2.8 − LDVCC V
Input terminalthreshold voltage
VIM 1.2 −
2.1
Input terminalthreshold voltage
VIL GND −
0.5
Maximum Output Amplitude
VOMLD 6.7 −
Voltage gain (Loading)
GVLD 4.0 6.0 8.0
dB
Positive and negative voltage gain (Loading) ΔGVLD -2.0 0
2.0
dB
Input terminal inflow current
IINL −
30
60
μA
Terminal LDCONT inflow current
ILDC −
25
80
μA
● Not designed for radiation resistance.
Condition
Under braking
No load applied
No load applied
No load applied
RIN=10KΩ
VMUTE=3.3V
Under braking
RL=9Ω
LDCONT=1V
LDIN=3.3V
LDCONT=3.3V
● OUTLINE DIMENSIONS, SYMBOLS
BD8201FM
Lot No.
REV. A

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