BD684(V2) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BD684 Datasheet PDF : 2 Pages
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PNP BD684
NPN BD683
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
M
x
Unit
-ICBO
Collector cut-off current
IE=0 , -VCB= -VCEOMAX=120 V
-
IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150°C -
-
-
0,2
1
mA
-ICEO
Collector cut-off current
IB=0 , -VCE= -1/2VCEOMAX=60 V
-
- 0,2 mA
-IEBO
Emitter cut-offcurrent
IC=0, -VEB=5 V
-
- 5 mA
-VCE(SAT)
Collector-Emitter saturation
Voltage
-IC=1.5 A, -IB=6 Ma
-
- 2,5 V
-VCE=3 V, -IC=500 mA
- 2200 -
hFE
DC Current Gain
-VCE=3 V, -IC=1,5 A
750 - -
-VCE=3 V, -IC=4 A
- 650 -
-VBE
Base-Emitter Voltage(1&2) -VCE=3 V, -IC=1,5 A
-
- 2,5 V
hfe
Small signal current gain -VCE=3 V, -IC=1,5 A, f= 1 MHz
10 - -
fhfe
Ut-off frequency
-VCE=3 V, -IC=1,5 A
- 60 - kHz
VF
Diode forward voltage
IF=1,5 A
- 1,5 - V
-I(SB)
Second-breakdown
collector current
-VCE=50 V, tP= 20ms,non rep., without
heatsink (BD676 ; VCE=40 V )
0,8 -
-A
ton
Turn-on time
toff
Turn-off time
-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V
-
0,8 2 µs
- 4,5 8
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
inches
min
max
min
max
A
7.4
7.8
0.295 0.307
B
10.5
10.8 0.413 0.425
C
2.4
2.7
0.094 0.106
D
0.7
0.9
0.027 0.035
E
2.2 typ.
0.087 typ.
F
0.49
0.75 0.019 0.029
G
4.4 typ.
0.173 typ.
H
2.54 typ.
0.100 typ.
L
15.7 typ.
0.618 typ.
M
1.2 typ.
0.047 typ.
N
3.8 typ.
0.149 typ.
P
3.0
3.2
0.118 0.126
Pin 1 :
Pin 2 :
Case :
Emitter
Collector
Base
COMSET SEMICONDUCTORS
2
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