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BD6373GW-E2(2015) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
BD6373GW-E2
(Rev.:2015)
ROHM
ROHM Semiconductor ROHM
BD6373GW-E2 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BD6373GW
Block Diagram
VCC
F3
TSD & UVLO
ENABLE12 C2
INPUT1 D2
INPUT2 E3
Logic12
Level Shift
&
Pre Driver
ENABLE34 D3
INPUT3 B3
INPUT4 B4
Logic34
Level Shift
&
Pre Driver
INPUT5 C5
BRAKE5 D4
INPUT6 E4
BRAKE6 D5
Logic5
Logic6
Level Shift
&
Pre Driver
F4
GND
BandGap
H bridge
Full ON
HFbulrliOdgNe
Full ON
Full ON
H bridge
Full ON
H bridge
Full ON
H bridge
Full ON
H bridge
Full ON
F2 VM12
E2 F1 OUT1A
E1 OUT1B
D1 OUT2A
C1 OUT2B
B1 PGND12
A2 VM34
A1 B2 OUT3A
A3 OUT3B
A4 OUT4A
A6 B5 OUT4B
A5 PGND34
F5 VM56
C6 OUT5A
D6 OUT5B
E6 OUT6A
E5 F6 OUT6B
B6 PGND56
Description of Blocks
1. Motor Control Input
(a) ENABLE12, ENABLE34, INPUT1 to INPUT6 Pins
Logic level controls the output logic of H-Bridge.
(See the Electrical Characteristics; p.4/12, and I/O Truth Table; p.5/12)
(b) BRAKE5 & BRAKE6 Pins
Logic high puts the device in short brake mode.
(See the Electrical Characteristics; p.4/12 and I/O Truth Table; p.5/12)
2. H-Bridge
Each H-bridge can be controlled independently. It is therefore possible to drive the H-bridges simultaneously, as long
as the package thermal tolerances are not exceeded. Because the respective output transistors consist of power
CMOS which consumes a motor power supply VM, the ON-Resistance value of high and low-side total is dependent
on VM voltage. Further, the whole application must be designed so that the maximum current of each channel may
be 500mA or below. (See the Recommended Operating Conditions; p.4/12)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/12
TSZ02201-0H3H0B601370-1-2
09.Dec.2015 Rev.001

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