BD45412 Ver la hoja de datos (PDF) - ROHM Semiconductor
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componentes Descripción
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BD45412 Datasheet PDF : 4 Pages
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Voltage detectors
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Limits
Unit
Power supply voltage
VDD – GND
– 0.3 ~ + 10
V
Output Nch open drain output
voltage CMOS output
VOUT
GND – 0.3 ~ + 10
GND – 0.3 ~ VDD + 0.3
V
ER pin input voltage
VCT
GND – 0.3 ~ VDD + 0.3
V
Power dissipation:SSOP5 ∗1
Operating temperature range
Storage temperature range
Pd
Topr
Tstg
540
mW
– 40 ~ + 105
˚C
– 55 ~ + 125
˚C
∗1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
BD45XXXG
BD46XXXG
Electrical characteristics (Unless otherwise noted; Ta=-25˚C ~ +105˚C)
Parameter
Symbol Min.
Typ.
Max.
Detection voltage
temperature coefficient
∗1 VDET/∆T
—
±100
±360
Hysteresis voltage
Circuit current when ON
∆VDET VDETX0.03 VDETX0.05 VDETX0.08
∗1
—
0.70
2.10
Icc1
—
0.75
2.25
—
0.80
2.40
∗1
—
0.75
2.25
Circuit current when OFF
Icc2
—
0.80
2.40
—
0.85
2.55
Min. operating voltage
VOPL
0.95
—
—
"L" output current
"H" output current
IOL
0.4
1.2
2.0
5
—
—
∗1
IOH
1.0
2.2
1.2
2.7
—
—
Output leak current
∗1 Ilaek
—
—
0.1
"H" transmission
delay time
ER pin "H" voltage
ER pin "L" voltage
∗1
45
50
55
tPLH
90
100
110
180
200
220
∗1 VEH
2.0
—
—
∗1
VEL
—
—
0.8
ER pin input current
IER
—
1
10
∗1 This value is guranteed at Ta=25˚C.
Note) RL is not necessary for CMOS output type.
Note) Please refer to the detection voltage of Line-up table.
Unit
ppm/˚C
%
µA
µA
V
mA
mA
µA
V
V
V
µA
Conditions
Ta=-40˚C ~ +105˚C
RL=470KΩ, VDD=L→H→L
VDET=2.3~3.1V
VDD=VDET–0.2V VDET=3.2~4.2V
VDET=4.3~4.8V
VDET=2.3~3.1V
VDD=VDET+2V VDET=3.2~4.2V
VDET=4.3~4.8V
RL=470kΩ, VOL≥0.4V
VDS=0.5V, VDD=1.2V
VDS=0.5V, VDD=2.4V (VDET≥2.7V)
VDS=0.5V, VDD=4.8V VDET=2.3~4.2V
VDS=0.5V, VDD=6.0V VDET=4.3~4.8V
VDD=VDS=10V
RL=100kΩ
CL=100pF
BD45XX5G, BD46XX5G
BD45XX1G, BD46XX1G
BD45XX2G, BD46XX2G
VER=2.0V
Characteristic diagram and Measurement circuit
Output delay time "L → H"
250
(BD4x28xG tPLH)
200
BD45282G
150
100
50
BD45281G
BD45285G
0
-60 -40 -20 0 20 40 60 80 100 120
Ta (°C)
5V
VDET±0.5V
VDD
ER
VOUT
GND
RL=100kΩ
100pF
Output delay time "H → L"
50
(BD4x28x tPLH)
40
30
20
10
0
-60 -40 -20 0 20 40 60 80 100 120
Ta (°C)
5V
VDET±0.5V
VDD
ER
VOUT
GND
RL=100kΩ
100pF
2/4
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