BCY79IX Ver la hoja de datos (PDF) - Philips Electronics

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componentes Descripción

Fabricante

BCY79IX

PNP switching transistors

Philips Electronics 

Philips Semiconductors

PNP switching transistors

Product specification

BCY78; BCY79

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Switching and amplification.

DESCRIPTION

PNP switching transistor in a TO-18 metal package.

NPN complements: BCY58 and BCY59.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

base

collector, connected to case

handbook, halfpa1ge

2

3

3

2

MAM263

1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BCY78

BCY79

VCEO

collector-emitter voltage

BCY78

BCY79

IC

collector current (DC)

Ptot

total power dissipation

hFE

DC current gain

BCY78/VII; BCY79/VII

BCY78/VIII; BCY79/VIII

BCY78/IX; BCY79/IX

BCY78/X

fT

transition frequency

toff

turn-off time

CONDITIONS

MIN.

open emitter

−

−

open base

−

−

−

Tamb ≤ 45 °C

−

Tcase ≤ 45 °C

−

IC = −2 mA; VCE = −5 V

120

180

250

380

IC = −10 mA; VCE = −5 V

100

ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA −

MAX. UNIT

−32

V

−45

V

−32

V

−45

V

−100 mA

340

mW

1

W

220

310

460

630

−

MHz

400

ns

1997 Jun 18

2

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