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BCR8CM-12LB Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
BCR8CM-12LB
Renesas
Renesas Electronics Renesas
BCR8CM-12LB Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BCR8CM-12LB
Latching Current vs.
Junction Temperature
103
7
5
3
Distribution
2
T2+, G–
102
Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
40
0
40
80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2
τ
101
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
7
5
Minimum
Characteristics
Value
3
I Quadrant
2
100
7100
III Quadrant
2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1028EJ0400 Rev.4.00
Feb 25, 2013
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
80
III Quadrant
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
5
III Quadrant
3
2 I Quadrant
100
7100
23
Minimum
Characteristics
Value
5 7 101 2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 8

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