BCR8CM-12LB Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

BCR8CM-12LB

Triac Medium Power Use

Renesas Electronics 

BCR8CM-12LB

Preliminary

Electrical Characteristics

Parameter

Symbol Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

—

On-state voltage

VTM

—

Gate trigger voltageNote2



VFGT

—



VRGT

—



VRGT

—

Gate trigger currentNote2



IFGT

—



IRGT

—



IRGT

—

—

2.0

mA Tj = 150C, VDRM applied

—

1.5

V

Tc = 25C, ITM = 12 A,

Instantaneous measurement

—

1.5

V

Tj = 25C, VD = 6 V, RL = 6 ,

—

1.5

V

RG = 330 

—

1.5

V

—

30Note6

mA Tj = 25C, VD = 6 V, RL = 6 ,

—

30Note6

mA RG = 330 

—

30Note6

mA

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote5

VGD

0.2/0.1

—

Rth (j-c)

—

—

(dv/dt)c 10/1

—

—

V Tj = 125C/150C,

VD = 1/2 VDRM

2.0

C/W Junction to caseNote3 Note4

—

V/s Tj = 125C/150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (IGT  20 mA) is also available. (IGT item: 1)

Test conditions

1. Junction temperature

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = – 4.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS1028EJ0400 Rev.4.00

Feb 25, 2013

Page 2 of 8

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