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BCR10CS-12LBB00 Ver la hoja de datos (PDF) - Renesas Electronics

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Fabricante
BCR10CS-12LBB00
Renesas
Renesas Electronics Renesas
BCR10CS-12LBB00 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BCR10CS-12LB
Latching Current vs.
Junction Temperature
103
7
5
3
2
Distribution T2+, G
102
Typical Example
7
5
3
2
101
7
5
3
2
TT22+–,,
G+
G
Typical Example
100
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
7
5
Main Voltage
(dv/dt)c
Time
VD
Typical Example
Tj = 125°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
Minimum
Characteristics
5 Value
I Quadrant
3
2
100
7100
III Quadrant
2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 –40 20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
III Quadrant
80
60
40 I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
101
f = 3Hz
7
5
I Quadrant
3
III Quadrant
2
Minimum
100
Characteristics
Value
7100 2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 5 of 8

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