BCR10CS-12LB-T11-B00 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

BCR10CS-12LB-T11-B00

Triac Medium Power Use

Renesas Electronics 

BCR10CS-12LB

Preliminary

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

—

On-state voltage

VTM

—

Gate trigger voltageNote2



VFGT

—



VRGT

—



VRGT

—

Gate trigger currentNote2



IFGT

—



IRGT

—



IRGT

—

—

2.0

mA Tj = 150C, VDRM applied

—

1.5

V Tc = 25C, ITM = 15 A,

Instantaneous measurement

—

1.5

V Tj = 25C, VD = 6 V, RL = 6 ,

—

1.5

V

RG = 330 

—

1.5

V

—

30Note6 mA Tj = 25C, VD = 6 V, RL = 6 ,

—

30Note6

mA

RG = 330 

—

30Note6

mA

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltageNote5

VGD

0.2/0.1

—

Rth (j-c)

—

—

(dv/dt)c 10/1

—

—

V

Tj = 125C/150C, VD = 1/2 VDRM

1.8

C/W Junction to caseNote3 Note4

—

V/s Tj = 125C/150C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T2 tab.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (IGT  20 mA) is also available. (IGT item: 1)

Test conditions

1. Junction temperature

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = – 5.0 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS0224EJ0400 Rev.4.00

Dec 14, 2010

Page 2 of 8

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