BCR12PM-12LD Ver la hoja de datos (PDF) - Renesas Electronics
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BCR12PM-12LD Datasheet PDF : 8 Pages
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BCR12PM-12LD
Holding Current vs.
Junction Temperature
103
Typical Example
102
101
−40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
−40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
Typical Example
140
Tj = 150°C
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Preliminary
Latching Current vs.
Junction Temperature
103
Distribution T2+, G–
Typical Example
102
101 T2+, G+
Typical Example T2–, G–
Typical Example
100
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
Tj = 125°C
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101 Minimum
Value
III Quadrant
I Quadrant
Main
Time
Voltage (dv/dt)c
VD
100
Main
Current
IT
τ
(di/dt)c
Time
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0973EJ0100 Rev.1.00
Dec 20, 2012
Page 5 of 7
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