BCP53(2011) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

BCP53
(Rev.:2011)

PNP Silicon Epitaxial Transistors

ON Semiconductor 

BCP53 Series, SBCP53 Series

TYPICAL CHARACTERISTICS

1.2

Vce = 2 V

1.1

BCP53, −10

1.0

0.9

−55°C

0.8

0.7

0.6 +25°C

0.5

0.4

+150°C

0.3

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 7. BCP53, −10 Base Emitter Turn−On

Voltage vs. Collector Current VBE(on)

1.0

BCP53, −10, −16

0.9

IC = 1.0 A

0.8

IC = 500 mA

0.7

0.6

IC = 100 mA

0.5

0.4

0.3

IC = 1.5 A

0.2

0.1

0

0.001

0.01

0.1

1

Ib, BASE CURRENT (A)

Figure 9. BCP53, −10, −16 Saturation Region

1.2

1.1 Vce = 2 V

BCP53 −16

1.0

0.9

−55°C

0.8

0.7 +25°C

0.6

0.5

+150°C

0.4

0.3

0.2

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 8. BCP53−16 Base Emitter Turn−On

Voltage vs. Collector Current

110

BCP53−10

100

90

BCP53

80

70

60

BCP53−16

50

40

0

1

2

3

4

5

VOLTAGE (V)

Figure 10. Input Capacitance

25

20

BCP53−10

15

10

5 BCP53−16

BCP53

0

0 2 4 6 8 10 12 14 16 18 20

VOLTAGE (V)

Figure 11. Output Capacitance

10

100 ms 10 ms

1s

1 ms

1

CONTINUOUS THERMAL LIMIT

0.1

SINGLE PULSE TEST AT Tamb = 25°C

0.01

0.1

1

10

100

Vce, COLLECTOR EMITTER VOLTAGE (V)

Figure 12. Standard Operating Area

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