INA-54063-TR1 Ver la hoja de datos (PDF) - HP => Agilent Technologies

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componentes Descripción

Fabricante

INA-54063-TR1

3.0 GHz Low Noise Silicon MMIC Amplifier

HP => Agilent Technologies 

INA-54063 Absolute Maximum Ratings

Symbol

Vd

Pin

Tj

TSTG

Parameter

Supply Voltage, to Ground

CW RF Input Power

Junction Temperature

Storage Temperature

Units

V

dBm

°C

°C

Absolute

Maximum[1]

12

13

150

-65 to 150

Thermal Resistance[2]:

θj-c= 165°C/W

Notes:

1. Operation of this device above any

one of these limits may cause

permanent damage.

2. TC = 25°C (TC is defined to be the

temperature at the package pins

where contact is made to the

circuit board).

Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 5 V, unless noted

Symbol

Parameters and Test Conditions

Units Min. Typ. Max. Std.

Dev.[1]

GP

Power Gain (|S21| 2)

NF Noise Figure

f = 1900 MHz dB 19 21.5

0.7

f = 1900 MHz dB

5.0

0.4

P1dB Output Power at 1 dB Gain Compression f = 1900 MHz dBm

8.0

IP3 Third Order Intercept Point

f = 1900 MHz dBm

17

f = 2150 MHz

15.7

VSWRin Input VSWR

f = 1900 MHz

1.4

VSWRout Output VSWR

f = 1900 MHz

2.4

Id

Device Current

mA

29 36 1.8

td

Group Delay

f = 1900 MHz ps

272

Note:

1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during

the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical

specification.

6-164

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