BC856AF Ver la hoja de datos (PDF) - Philips Electronics

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componentes Descripción

Fabricante

BC856AF

PNP general purpose transistors

Philips Electronics 

Philips Semiconductors

PNP general purpose transistors

Preliminary specification

BC856F; BC857F; BC858F series

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

in free air; note 1

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

hFE

VCEsat

emitter cut-off current

DC current gain

BC856AF; BC857AF; BC858AF

BC856BF; BC857BF; BC858BF

BC857CF; BC858CF

collector-emitter saturation voltage

VBE

base-emitter voltage

Cc

collector capacitance

fT

transition frequency

F

noise figure

CONDITIONS

IE = 0; VCB = −30 V

IE = 0; VCB = −30 V; Tj = 150 °C

IC = 0; VEB = −5 V

IC = −2 mA; VCE = −5 V

IC = −10 mA; IB = −0.5 mA

IC = −100 mA; IB = −5 mA; note 1

IC = −2 mA; VCE = −5 V

IC = −10 mA; VCE = −5 V

IE = ie = 0; VCB = −10 V; f = 1 MHz

IC = −10 mA; VCE = −5 V; f = 100 MHz

IC = −200 µA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 220 Hz

MIN.

−

−

−

125

220

420

−

−

−600

−

−

100

−

MAX.

−15

−5

−100

250

475

800

−200

−400

−750

−820

2.5

−

10

UNIT

nA

µA

nA

mV

mV

mV

mV

pF

MHz

dB

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

1999 May 21

4

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