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BC847ATDG Datasheet PDF : 15 Pages
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NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
400
hFE
(1)
300
200
(2)
(3)
100
mgt723
1200
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
200
mgt724
0
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Selection A: DC current gain as a function of
collector current; typical values
0
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. Selection A: Base-emitter voltage as a
function of collector current; typical values
103
VCEsat
(mV)
102
(1)
(2)
(3)
mgt725
1200
VBEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
200
mgt726
10
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
0
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4.
Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847_BC547_SER_7
Product data sheet
Rev. 07 — 10 December 2008
© NXP B.V. 2008. All rights reserved.
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