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BC847AT Datasheet PDF : 15 Pages
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NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
15
nA
-
-
5
µA
-
-
100 nA
hFE
DC current gain
hFE group A
VCE = 5 V; IC = 10 µA
-
90
-
hFE group B
VCE = 5 V; IC = 10 µA
-
150 -
hFE group C
VCE = 5 V; IC = 10 µA
-
270 -
DC current gain
VCE = 5 V; IC = 2 mA
110 -
800
hFE group A
VCE = 5 V; IC = 2 mA
110 180 220
hFE group B
VCE = 5 V; IC = 2 mA
200 290 450
hFE group C
VCE = 5 V; IC = 2 mA
420 520 800
VCEsat collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
IC = 100 mA; IB = 5 mA [1] -
90
200 mV
200 400 mV
VBEsat base-emitter
IC = 10 mA; IB = 0.5 mA [2] -
700 -
mV
saturation voltage IC = 100 mA; IB = 5 mA [2] -
900 -
mV
VBE
base-emitter voltage IC = 2 mA; VCE = 5 V
[2] 580 660 700 mV
IC = 10 mA; VCE = 5 V
-
-
770 mV
Cc
collector capacitance IE = ie = 0 A; VCB = 10 V;
-
-
1.5 pF
f = 1 MHz
Ce
emitter capacitance IC = ic = 0 A; VEB = 0.5 V;
-
11
-
pF
f = 1 MHz
fT
transition frequency IC = 10 mA; VCE = 5 V;
100 -
-
MHz
f = 100 MHz
NF
noise figure
IC = 200 µA; VCE = 5 V;
-
2
10
dB
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC847_BC547_SER_7
Product data sheet
Rev. 07 — 10 December 2008
© NXP B.V. 2008. All rights reserved.
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