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BC846BDW1T1G

NPN Duals Dual General Purpose Transistors

ON Semiconductor 

BC846BDW1T1G,

BC847BDW1T1G,

BC848CDW1T1G

Dual General Purpose

Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol BC846 BC847 BC848 Unit

Collector −Emitter Voltage

VCEO

65

45

30

V

Collector −Base Voltage

VCBO

80

50

30

V

Emitter−Base Voltage

VEBO

6.0

6.0

5.0

V

Collector Current −

Continuous

IC

100 100 100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Total Device Dissipation

PD

Per Device

FR−5 Board (Note 1)

TA = 25°C

Derate Above 25°C

Thermal Resistance,

Junction to Ambient

RqJA

Junction and Storage

Temperature Range

TJ, Tstg

1. FR−5 = 1.0 x 0.75 x 0.062 in

Max

380

250

3.0

328

−55 to +150

Unit

mW

mW/°C

°C/W

°C

http://onsemi.com

(3)

(2)

(1)

Q1

Q2

(4)

(5)

(6)

6

1

SOT−363

CASE 419B

STYLE 1

MARKING

DIAGRAM

1x MG

G

1x = Specific Device Code

x = B, F, G, L

M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2010

1

July, 2010 − Rev. 7

Publication Order Number:

BC846BDW1T1/D

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