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BC846DS

65 V, 100 mA NPN/NPN general-purpose transistor

NXP Semiconductors. 

NXP Semiconductors

BC846DS

65 V, 100 mA NPN/NPN general-purpose transistor

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Tj

junction temperature

-

Tamb

ambient temperature

−55

Tstg

storage temperature

−65

Max Unit

150

°C

+150 °C

+150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

500

Ptot

(mW)

400

006aab621

300

200

100

0

−75

−25

25

75

125

175

Tamb (°C)

FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve SOT457 (SC-74)

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

Rth(j-sp)

thermal resistance from

junction to solder point

Per device

Rth(j-a)

thermal resistance from

junction to ambient

Conditions

in free air

in free air

Min Typ Max

[1] -

-

500

-

-

250

[1] -

-

328

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Unit

K/W

K/W

K/W

BC846DS_1

Product data sheet

Rev. 01 — 17 July 2009

© NXP B.V. 2009. All rights reserved.

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