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Fabricante

BC846DS

65 V, 100 mA NPN/NPN general-purpose transistor

NXP Semiconductors. 

NXP Semiconductors

BC846DS

65 V, 100 mA NPN/NPN general-purpose transistor

2. Pinning information

Table 2.

Pin

1

2

3

4

5

6

Pinning

Description

emitter TR1

base TR1

collector TR2

emitter TR2

base TR2

collector TR1

Simplified outline Graphic symbol

654

654

123

TR2

TR1

123

sym020

3. Ordering information

Table 3. Ordering information

Type number Package

Name Description

BC846DS

SC-74 plastic surface-mounted package (TSOP6); 6 leads

Version

SOT457

4. Marking

Table 4. Marking codes

Type number

BC846DS

Marking code

ZK

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per transistor

VCBO

collector-base voltage open emitter

-

VCEO

collector-emitter voltage open base

-

VEBO

emitter-base voltage

open collector

-

IC

collector current

-

ICM

peak collector current single pulse;

-

tp ≤ 1 ms

IBM

peak base current

single pulse;

-

tp ≤ 1 ms

Ptot

total power dissipation Tamb ≤ 25 °C

[1] -

Per device

Ptot

total power dissipation Tamb ≤ 25 °C

[1] -

Max Unit

80

V

65

V

6

V

100

mA

200

mA

200

mA

250

mW

380

mW

BC846DS_1

Product data sheet

Rev. 01 — 17 July 2009

© NXP B.V. 2009. All rights reserved.

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