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RFP3N50 Datasheet PDF : 10 Pages
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RFM3N45, RFM3N50, RFP3N45, RFP3N50
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM3N45
RFM3N50
RFP3N45
RFP3N50
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS
450
500
450
500
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . VDGR
450
500
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID
3
3
3
3
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM
5
5
5
5
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
75
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
75
60
60
W
0.6
0.48
0.48
W/oC
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg
260
300
260
300
260
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFM3N45, RFP3N45
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
MIN TYP MAX UNITS
450 -
-
V
RFM3N50, RFP3N50
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
RFM3N45, RFM3N50
RFP3N45, RFP3N50
500
VGS(TH) VGS = VDS, ID = 250µA, (Figure 7)
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -
IGSS VGS = ±20V, VDS = 0V
-
rDS(ON) ID = 3A, VGS = 10V, (Figures 5, 6)
-
VDS(ON) ID = 3A, VGS = 10V
-
td(ON) VDD = 250V, ID ≈ 1.5A, RG = 50Ω, VGS = 10V
-
tr
RL = 165Ω
(Figures 10, 11, 12)
-
td(OFF)
-
tf
-
CISS VDS = 25V, VGS = 0V, f = 1MHz
-
COSS
-
CRSS
-
RθJC
-
-
-
-
V
-
4.0
V
-
1
µA
-
25
µA
- ±100 nA
-
3
Ω
-
9.0
V
30 45
ns
40 60
ns
90 135 ns
50 75
ns
- 750 pF
- 150 pF
- 100 pF
- 1.67 oC/W
- 2.083 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1.5A
Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
800
-
ns
2
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