BC818 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
BC818 Datasheet PDF : 4 Pages
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Production specification
NPN General Purpose Amplifier
BC818
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA IE=0
30
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
818-16
818-25
818-40
818-16
818-25
818-40
Collector-emitter saturation voltage
V(BR)CEO IC=10mA IB=0
25
V
V(BR)EBO IE=10μA IC=0
5
V
ICBO
VCB=25V IE=0
0.1 μA
IEBO
VEB=4V IC=0
0.1 μA
100 250
hFE
VCE=1V IC=100mA 160 400
250 630
60
hFE
VCE=1V IC=300mA 100
170
VCE(sat)
IC=500mA IB=50mA
0.7 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=500mA IB=50mA
1.2
VCE=5V,IC=50mA
170
f=100MHz
V
MHz
C102
Rev.A
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