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BC327T/R Datasheet PDF : 19 Pages
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NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC807
BC807W
BC327
storage temperature
junction temperature
ambient temperature
open emitter
open base;
IC = 10 mA
open collector
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
-
-
-
-
-
-
[1][2] -
[1][2] -
[1][2] -
−65
-
−65
Max Unit
−50
V
−45
V
−5
V
−500 mA
−1
A
−200 mA
250
mW
200
mW
625
mW
+150 °C
150
°C
+150 °C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC807
BC807W
BC327
Conditions
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Tamb ≤ 25 °C
Min Typ Max Unit
[1][2] -
-
500 K/W
[1][2] -
-
625 K/W
[1][2] -
-
200 K/W
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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