BC556 Ver la hoja de datos (PDF) - Unisonic Technologies
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BC556 Datasheet PDF : 4 Pages
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BC556/557/558
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
BC556
-80
V
Collector-Base Voltage
BC557
VCBO
-50
V
BC558
-30
V
BC556
-65
V
Collector-Emitter Voltage
BC557
VCEO
-45
V
BC558
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-100
mA
Power Collector Dissipation
Linear Derating Factor above (Ta=25°C)
PC
625
mW
5
mW/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
200
83.3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
BC556
Collector-Emitter Breakdown Voltage BC557 BVCEO IC=-10mA, IB=0
BC558
BC556
Collector-Base Breakdown Voltage BC557 BVCBO IC=-100μA
BC558
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA, IC=0
Collector Cut-Off Current
ICBO IE = 0, VCB =-30 V
DC Current Gain
hFE VCE =-5V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =-10mA, IB=-0.5mA
IC =-100mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC =-10mA, IB =-0.5mA
IC =-100mA, IB=-5mA
Base-Emitter Turn-On Voltage
VBE(ON)
VCE =-5 V,IC=-2mA
VCE =-5 V,IC=-10mA
Current Gain Bandwidth Product
fT VCE=-5V, IC=-10mA, f =10MHz
Output Capacitance
Noise Figure
COB VCB=-10V, IE=0, f=1MHz
NF
VCE=-5V, IC=-200μA
f=1KHz, RG=2KΩ
CLASSIFICATION OF hFE
RANK
hFE
A
110 - 220
B
200 - 450
MIN
-65
-45
-30
-80
-50
-30
-5.0
110
-600
TYP
-90
-250
-700
-900
-660
150
MAX UNIT
V
V
V
V
V
V
V
-15 nA
800
-300 mV
-650 mV
mV
mV
-750 mV
-800 mV
MHz
6 pF
2 10 dB
C
420 - 800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-051.C
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